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# Improving the performance of high-power electronics

**[MIT News](https://daily.dev/sources/mit)** · 6 min read · 0 upvotes · 0 comments

## Summary

MIT engineers have embedded gallium nitride (GaN) transistors into an ultrathin single-crystal diamond interposer to solve the heat management problem in high-power electronics. Diamond, having the highest thermal conductivity of any known material, acts as a heat spreader that equalizes temperatures across the chip without introducing unwanted capacitances — a key drawback of prior approaches that grew diamond on top of GaN. Using a femtosecond laser and a precisely placed 20-micron die attach film, the team fabricated a power amplifier that outperformed all comparable devices in the literature. The technique is scalable for commercial production and has potential applications in 6G wireless, satellite communications, high-power radar, space systems, industrial drones, and data center power conversion.

## Full article

daily.dev links to this article rather than hosting it. Read it at the original source: <https://news.mit.edu/2026/improving-high-power-electronics-performance-0608>

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