At PCIM Europe 2026, several power electronics companies announced partnerships to accelerate wide-bandgap (WBG) semiconductor innovation. Key highlights include a GE Aerospace and Wolfspeed MOU to develop high-voltage SiC power modules for industrial, aerospace, and defense markets, and Wolfspeed's Gen 5 SiC MOSFET technology claiming up to 27% efficiency improvement over competitive 1,200-V solutions. Nexperia and Semikron Danfoss signed an MOU for SiC power modules targeting automotive traction inverters, while Nexperia also launched 1,200-V SiC MOSFETs in QDPAK packaging for high-power-density applications. In the GaN space, Cambridge GaN Devices partnered with NXP Semiconductors for automotive, industrial, and data center power conversion, leveraging CGD's proprietary ICeGaN single-chip technology that enables parallel device operation for high-current traction inverters. The SiC market is projected to reach $11 billion by 2031 at 20% CAGR, driven by EV adoption and AI data center demand.
