--- title: Quantum-Tunnelling Field-Effect Transistor Designed to... description: Researchers at The Hong Kong Polytechnic University, working with collaborators from several universities in Singapore, Hong Kong, and China, developed a... canonical: https://daily.dev/posts/quantum-tunnelling-field-effect-transistor-designed-to-overcome-integrated-circuit-chip-development--1sphzuoo9 twitter:card: summary_large_image twitter:site: @dailydotdev og:type: website og:site_name: daily.dev og:title: Quantum-Tunnelling Field-Effect Transistor Designed to Overcome Integrated-Circuit Chip Development Barriers | daily.dev og:description: Researchers at The Hong Kong Polytechnic University, working with collaborators from several universities in Singapore, Hong Kong, and China, developed a... og:url: https://daily.dev/posts/quantum-tunnelling-field-effect-transistor-designed-to-overcome-integrated-circuit-chip-development--1sphzuoo9 og:image: https://api.daily.dev/og/posts/1SPHzUoO9.png og:image:alt: Quantum-Tunnelling Field-Effect Transistor Designed to Overcome Integrated-Circuit Chip Development Barriers og:image:width: 1200 og:image:height: 630 og:locale: en --- > ## Documentation Index > Fetch the complete documentation index at: https://daily.dev/llms.txt > Use this file to discover all available pages before exploring further. # Quantum-Tunnelling Field-Effect Transistor Designed to Overcome Integrated-Circuit Chip Development Barriers **[The Quantum Insider](https://daily.dev/sources/thequantuminsider)** · 4 min read · 0 upvotes · 0 comments ## Summary Researchers at The Hong Kong Polytechnic University, working with collaborators from several universities in Singapore, Hong Kong, and China, developed a two-dimensional tunnelling field-effect transistor (TFET) using a bismuth/indium selenide heterostructure. The device operates below the 60mV/decade Boltzmann limit that constrains conventional MOSFETs, across six orders of magnitude, while needing only a 160mV gate-voltage range versus 800mV for advanced MOSFETs. It also achieves high output current and ON/OFF ratio, and was fabricated on centimetre-scale silicon substrates using pulsed laser deposition, a method the team says is scalable for wafer-level manufacturing. The findings, published in Science, are pitched as a step toward more energy-efficient chips for AI and high-performance computing. ## Full article daily.dev links to this article rather than hosting it. Read it at the original source: ## Similar posts on daily.dev - [An ultra-fast quantum tunneling device for the 6G terahertz era](https://daily.dev/posts/an-ultra-fast-quantum-tunneling-device-for-the-6g-terahertz-era-gqukc9fpp) · Phys.org · 0 upvotes · 0 comments - [IBM has unveiled chip technology that could help extend Moore’s Law another decade](https://daily.dev/posts/ibm-has-unveiled-chip-technology-that-could-help-extend-moore-s-law-another-decade-u4ys7siku) · MIT Technology Review · 0 upvotes · 0 comments - [MIT engineers develop a magnetic transistor for more energy-efficient electronics](https://daily.dev/posts/mit-engineers-develop-a-magnetic-transistor-for-more-energy-efficient-electronics-pyjp8liot) · MIT News · 0 upvotes · 0 comments - [From light to logic: Ultrafast quantum switching in 2D materials](https://daily.dev/posts/from-light-to-logic-ultrafast-quantum-switching-in-2d-materials-6fs1kepgx) · Phys.org · 0 upvotes · 0 comments --- Tags: [#science](https://daily.dev/tags/science) [View this post on daily.dev](https://daily.dev/posts/quantum-tunnelling-field-effect-transistor-designed-to-overcome-integrated-circuit-chip-development--1sphzuoo9) ```json {"@context":"https://schema.org","@graph":[{"@type":"Organization","@id":"https://daily.dev/#organization","name":"daily.dev","url":"https://daily.dev","logo":{"@type":"ImageObject","url":"https://daily.dev/apple-touch-icon.png","width":180,"height":180},"sameAs":["https://twitter.com/dailydotdev","https://github.com/dailydotdev","https://www.linkedin.com/company/daily-dev-ltd"]},{"@type":"WebSite","@id":"https://daily.dev/#website","url":"https://daily.dev","name":"daily.dev","publisher":{"@id":"https://daily.dev/#organization"},"potentialAction":{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https://daily.dev/search?q={search_term_string}"},"query-input":"required name=search_term_string"}}]} {"@context":"https://schema.org","@type":"TechArticle","headline":"Quantum-Tunnelling Field-Effect Transistor Designed to Overcome Integrated-Circuit Chip Development Barriers","url":"https://daily.dev/posts/quantum-tunnelling-field-effect-transistor-designed-to-overcome-integrated-circuit-chip-development--1sphzuoo9","mainEntityOfPage":{"@type":"WebPage","@id":"https://daily.dev/posts/quantum-tunnelling-field-effect-transistor-designed-to-overcome-integrated-circuit-chip-development--1sphzuoo9"},"datePublished":"2026-09-01T09:43:37.098Z","dateModified":"2026-09-01T09:43:55.866Z","description":"Researchers at The Hong Kong Polytechnic University, working with collaborators from several universities in Singapore, Hong Kong, and China, developed a...","image":"https://media.daily.dev/image/upload/f_auto,q_auto/v1/posts/95b8d7ad33fdad9db04e00cca37b6d82?_a=AQAEuop","thumbnailUrl":"https://media.daily.dev/image/upload/f_auto,q_auto/v1/posts/95b8d7ad33fdad9db04e00cca37b6d82?_a=AQAEuop","isAccessibleForFree":true,"articleSection":"The Quantum Insider","inLanguage":"en","publisher":{"@type":"Organization","name":"daily.dev","url":"https://daily.dev","logo":{"@type":"ImageObject","url":"https://daily.dev/apple-touch-icon.png","width":180,"height":180}},"author":{"@type":"Organization","name":"The Quantum Insider","logo":"https://media.daily.dev/image/upload/t_logo,f_auto/v1/logos/7b14a6b34c1b464c9e8a88d9a0dac951","url":"https://daily.dev/sources/thequantuminsider"},"commentCount":0,"discussionUrl":"https://daily.dev/posts/quantum-tunnelling-field-effect-transistor-designed-to-overcome-integrated-circuit-chip-development--1sphzuoo9","interactionStatistic":[{"@type":"InteractionCounter","interactionType":{"@type":"LikeAction"},"userInteractionCount":0},{"@type":"InteractionCounter","interactionType":{"@type":"CommentAction"},"userInteractionCount":0}],"keywords":"science","timeRequired":"PT4M"} {"@context":"https://schema.org","@type":"BreadcrumbList","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https://daily.dev"},{"@type":"ListItem","position":2,"name":"The Quantum Insider","item":"https://daily.dev/sources/thequantuminsider"},{"@type":"ListItem","position":3,"name":"Quantum-Tunnelling Field-Effect Transistor Designed to Overcome Integrated-Circuit Chip Development Barriers"}]} ```