Samsung presented new memory technologies at FMS 2026 targeting AI and HPC workloads. Key announcements include zHBM, a 3D architecture that vertically stacks high-bandwidth memory above AI accelerators promising 8x HBM5 performance and 10x density via wafer bonding. zNAND-O is a high-performance NAND in 4- and 8-layer configs for edge AI. V10 BV-NAND becomes the first NAND to exceed 400 layers, achieving 58% higher density over V9. Samsung also showcased HBM4E, HBM5, LPDDR5X-PIM with processing-in-memory, and enterprise SSDs aimed at AI server and data center demands.
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